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5N50L-TN3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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5N50L-TN3-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page ![]() 5N50 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-476.H ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V Breakdown Voltage Temperature Coefficient △BVDSS △ /TJ Reference to 25°C, ID=250µA 0.5 V/°C Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 1 µA VDS=400V, TC=125°C 10 Gate- Source Leakage Current Forward IGSS VGS=30V, VDS=0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A 1.4 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 535 625 pF Output Capacitance COSS 70 105 pF Reverse Transfer Capacitance CRSS 17 20 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω (Note 1, 2) 30 45 ns Rise Time tR 50 70 ns Turn-OFF Delay Time tD(OFF) 145 165 ns Fall-Time tF 72 105 ns Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A, IG=100μA (Note 1, 2) 20 24 nC Gate to Source Charge QGS 4 nC Gate to Drain Charge QGD 5 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS 5 A Maximum Pulsed Drain-Source Diode Forward Current ISM 20 A Drain-Source Diode Forward Voltage VSD IS=5A, VGS=0V 1.4 V Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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