2N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-053.Z



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

2.0

A

Drain Current

Continuous

2.0

A

Pulsed (Note 2)

8.0

A

Avalanche Energy

Single Pulsed (Note 3)

140

mJ

Repetitive (Note 2)

4.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

(

TO-220/ TO-262

54

W

TO-220F/TO-220F1

TO-220F3

23

W

TO-220F2

24

W

TO-251/TO-251L

TO-251S/TO-251S2

TO-251S4/TO-252

TO-252D

44

W

TO-126/TO-126C

40

W

DFN-8(5×6)

22

W

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

PACKAGE

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3/TO-262

62.5

°С/W

TO-251/TO-251L

TO-251S/TO-251S2

TO-251S4/TO-252

TO-252D

100

°С/W

TO-126/TO-126C

89

°С/W

DFN-8(5×6)

75

°С/W

Junction to Case

TO-220/ TO-262

2.32

°С/W

TO-220F/TO-220F1

TO-220F3

5.5

°С/W

TO-220F2

5.43

°С/W

TO-251/TO-251L

TO-251S/TO-251S2

TO-251S4/TO-252

TO-252D

2.87

°С/W

TO-126/TO-126C

3.12

°С/W

DFN-8(5×6)

5.6

°С/W