数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

2N60L-TND-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 2N60L-TND-R
功能描述  N-CHANNEL ENHANCEMENT MODE
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2N60L-TND-R 数据表(HTML) 4 Page - Unisonic Technologies

  2N60L-TND-R Datasheet HTML 1Page - Unisonic Technologies 2N60L-TND-R Datasheet HTML 2Page - Unisonic Technologies 2N60L-TND-R Datasheet HTML 3Page - Unisonic Technologies 2N60L-TND-R Datasheet HTML 4Page - Unisonic Technologies 2N60L-TND-R Datasheet HTML 5Page - Unisonic Technologies 2N60L-TND-R Datasheet HTML 6Page - Unisonic Technologies 2N60L-TND-R Datasheet HTML 7Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 4 / 7 page
background image
2N60
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R502-053.Z
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
600
V
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
10
μA
VDS = 480V, TC = 125°С
100
μA
Gate-Source Leakage Current
Forward
IGSS
VGS = 30V, VDS = 0V
100
nA
Reverse
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature Coefficient △BVDSS △
/TJ ID=250μA, Referenced to 25°C
0.4
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
3.6
5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25V, VGS =0V,
f =1MHz
300 350
pF
Output Capacitance
COSS
45
50
pF
Reverse Transfer Capacitance
CRSS
10
13
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
VDD =300V, ID =2.4A,
RG=25Ω (Note 1, 2)
40
60
ns
Turn-On Rise Time
tR
35
55
ns
Turn-Off Delay Time
tD(OFF)
90
120
ns
Turn-Off Fall Time
tF
50
60
ns
Total Gate Charge
QG
VDS=480V, VGS=10V,
ID=2.4A (Note 1, 2)
40
50
nC
Gate-Source Charge
QGS
4.2
nC
Gate-Drain Charge
QGD
8.4
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
1.4
V
Continuous Drain-Source Current
ISD
2.0
A
Pulsed Drain-Source Current
ISM
8.0
A
Reverse Recovery Time
trr
VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/μs (Note 1)
180
ns
Reverse Recovery Charge
QRR
0.72
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.



Html Pages

1 2 3 4 5 6 7


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com