4N60L-TQ2-R datasheet(1/9 Pages) UTC

部件名	4N60L-TQ2-R

功能描述	N-CHANNEL ENHANCEMENT MODE MOSFET

PDF	9 Pages

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制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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1 / 9 page

UNISONIC TECHNOLOGIES CO., LTD

4N60

Power MOSFET

www.unisonic.com.tw

1 of 9

QW-R502-061.Z

4A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 4N60 is a high voltage power MOSFET and is

designed to have better characteristics, such as fast

switching time, low gate charge, low on-state resistance and

have a high rugged avalanche characteristics. This power

MOSFET is usually used at high speed switching

applications in power supplies, PWM motor controls, high

efficient DC to DC converters and bridge circuits.



FEATURES

* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high Ruggedness



SYMBOL

类似零件编号 - 4N60L-TQ2-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	4N60L-TQ2-R	408Kb / 9P	4A, 600V N-CHANNEL POWER MOSFET
	4N60L-TQ2-R	262Kb / 7P	N-CHANNEL JUNCTIN SILICON FET
	4N60L-TQ2-R	250Kb / 8P	N-CHANNEL POWER MOSFET
	4N60L-TQ2-R	262Kb / 7P	N-CHANNEL POWER MOSFET
	4N60L-TQ2-R	236Kb / 7P	N-CHANNEL POWER MOSFET

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