7N70

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-103. H



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

700

V

Gate-Source Voltage

±30

V

Continuous Drain Current

7.0

A

4.7

A

Drain Current Pulsed (Note 2)

28

A

Avalanche Energy, Single Pulsed (Note 3)

530

mJ

14.2

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220F/TO-220F1

TO-220F3

48

W

TO-220/TO-262

TO-263

142

W

TO-220F2

50

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

TO-220F/TO-220F1

TO-220F3

2.6

°C/W

TO-220/TO-262

TO-263

0.88

°C/W

TO-220F2

2.5

°C/W