10N60G-TQ2-R datasheet(4/9 Pages) UTC

4 / 9 page

10N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 9

www.unisonic.com.tw

QW-R502-119.O



ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250μA

600

Drain-Source Leakage Current

IDSS

VDS=600V, VGS=0V

µA

VDS=480V, TC=125°С

100

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=30 V, VDS=0V

100

Reverse

VGS=-30 V, VDS=0V

-100 nA

Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250µA, Referenced to 25°C

0.7

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=5A

0.68 0.75

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1.0 MHz

1570 2040 pF

Output Capacitance

COSS

166 215

Reverse Transfer Capacitance

CRSS

Gate Resistance

VDS=0V, VGS=0V, f=1MHz

0.25

1.4

Ω

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD=300V, ID =10A,

RG =25Ω (Note1, 2)

Turn-On Rise Time

150

Turn-Off Delay Time

tD(OFF)

144 300

Turn-Off Fall Time

165

Total Gate Charge

VDS=480V, ID=10A,

VGS=10 V (Note1, 2)

Gate-Source Charge

QGS

6.7

Gate-Drain Charge

QGD

18.5

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS=0 V, IS =10A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

trr

VGS=0 V, IS=10A,

dIF/dt=100A/µs (Note 1)

420

Reverse Recovery Charge

QRR

4.2

µC

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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