IPB240N04S4-R9 datasheet(3/9 Pages) INFINEON

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IPB240N04S4-R9

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

17700

23000 pF

Output capacitance

C oss

3850

5000

Reverse transfer capacitance

Crss

150

345

Turn-on delay time

t d(on)

Rise time

t r

Turn-off delay time

t d(off)

Fall time

t f

Gate Charge Characteristics

Gate to source charge

Q gs

117

Gate to drain charge

Q gd

Gate charge total

Q g

220

290

Gate plateau voltage

V plateau

5.4

Reverse Diode

Diode continous forward current

I S

240

Diode pulse current

I S,pulse

960

Diode forward voltage

V SD

V GS=0 V, I F=100 A,

T j=25 °C

0.9

1.3

Reverse recovery time

t rr

Reverse recovery charge

Q rr

130

2) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1) Current is limited by bondwire; with an R

thJC = 0.5 K/W the chip is able to carry 451A at 25°C.

V R=20 V, I F=50A,

di F/dt =100 A/µs

T C=25 °C

Values

V GS=0 V, V DS=25 V,

f =1 MHz

V DD=20 V, V GS=10 V,

I D=240 A,

R G,ext=3.5 W

V DD=32 V, I D=240 A,

V GS=0 to 10 V

Rev. 1.1

page 3

2014-04-07

IPB240N04S4-R9 数据表(PDF) 3 Page - Infineon Technologies AG

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