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IPD60R1K0CE 数据表(PDF) 8 Page - Infineon Technologies AG |
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IPD60R1K0CE 数据表(HTML) 8 Page - Infineon Technologies AG |
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8 / 16 page ![]() 8 600VCoolMOS™CEPowerTransistor IPD60R1K0CE,IPU60R1K0CE Rev.2.0,2014-09-25 Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] 0 25 50 75 100 125 150 0 10 20 30 40 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T |
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