7N10Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-762.B



PARAMETER

SYMBOL

RATINGS

UNIT

Drain -Source Voltage

100

V

Gate-Source Voltage

±20

V

Continuous Drain Current

7

A

Pulsed Drain Current (Note 2)

28

A

Single Pulsed Avalanche Energy (Note 3)

50

mJ

Power Dissipation

2.5

W

Derate above 25°C

0.02

W/°C

Operating Junction Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

3.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Repetitive Rating : Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

50

°C/W

Note: When mounted on the minimum pad size recommended (PCB Mount)



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

±10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-Resistance

0.145 0.35

Ω

DYNAMIC PARAMETERS

Input Capacitance

420

450

pF

Output Capacitance

80

100

pF

Reverse Transfer Capacitance

11

15

pF

SWITCHING PARAMETERS

Total Gate Charge

(Note 1,2)

9.5

nC

Gate Source Charge

1

nC

Gate Drain Charge

2.5

nC

Turn-ON Delay Time

(Note 1,2)

33

40

ns

Turn-ON Rise Time

35

42

ns

Turn-OFF Delay Time

94

116

ns

Turn-OFF Fall-Time

35

40

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

7

A

Maximum Pulsed Drain-Source Diode

Forward Current

28

A

Drain-Source Diode Forward Voltage

1.5

V

Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature