7N80G-TQ2-R datasheet(4/7 Pages) UTC

4 / 7 page

7N80

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 6

www.unisonic.com.tw

QW-R502-523.H



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

800

Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C

0.93

V/°C

Drain-Source Leakage Current

IDSS

VDS=800V, VGS=0V

µA

VDS=640V, TC=125°C

100

µA

Gate-Source Leakage Current

Forward

IGSS

VDS=0V ,VGS=30V

100

Reverse

VDS=0V ,VGS=-30V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

3.0

5.0

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=3.3A

1.3

1.8

Ω

Forward Transconductance

gFS

VDS=50V, ID=3.3A (Note 1)

5.5

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25V,VGS=0V,f=1.0MHz

1200 1680

Output Capacitance

COSS

120

155

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

VDS=120V, VGS=10V, ID=6.6A

IG=3.3mA (Note 1,2)

155

160

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=400V, ID=6.6A, RG=25Ω

(Note 1,2)

Turn-ON Rise Time

100

140

Turn-OFF Delay Time

tD(OFF)

300

320

Turn-OFF Fall Time

125

150

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

6.6

Maximum Body-Diode Pulsed Current

ISM

26.4

Drain-Source Diode Forward Voltage

VSD

IS =6.6A, VGS=0V

1.4

Body Diode Reverse Recovery Time

trr

VGS=0V, IS=6.6A,

dIF/dt=100A/μs (Note 1)

650

Body Diode Reverse Recovery Charge

QRR

7.0

μC

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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