15N20

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-717.D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

200

V

Gate-Source Voltage

±30

V

Continuous Drain Current

Continuous

15

A

Pulsed

60

A

Single Pulsed Avalanche Current

15

A

Single Pulsed Avalanche Energy

340

mJ

Power Dissipation

TO-220

145

W

TO-252

83

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

62.5

°C/W

TO-252

110

Junction to Case

TO-220

0.86

°C/W

TO-252

1.5



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

200

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

3

5

V

Static Drain-Source On-State Resistance

0.18 0.28

Ω

DYNAMIC PARAMETERS

Input Capacitance

610 800

pF

Output Capacitance

145 200

pF

Reverse Transfer Capacitance

42

60

pF

SWITCHING PARAMETERS

Total Gate Charge

27

32

nC

Gate to Source Charge

5.6

nC

Gate to Drain Charge

10

nC

Turn-ON Delay Time

39

45

ns

Rise Time

63

90

ns

Turn-OFF Delay Time

210 230

ns

Fall-Time

83

110

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

15

A

Maximum Body-Diode Pulsed Current

60

A

Drain-Source Diode Forward Voltage

1.5

V