UT2N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-511.F



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage (Note 1)

100

V

Gate-Source Voltage

±10

V

100

V

Drain Current

Continuous

2

A

Pulsed (Note 3)

5

A

Power Dissipation

SOT-223

1

W

TO-252

25

W

TO-92/ TO-92NL

3

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

Drain-Source Leakage Current

1.0

µA

25

Gate- Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

2.5

V

Drain-Source On Voltage (Note 2)

2.1

V

Static Drain-Source On-State Resistance

(Note 2)

1.050

Ω

DYNAMIC PARAMETERS

Input Capacitance

200

pF

Output Capacitance

80

pF

Reverse Transfer Capacitance

35

pF

Thermal Resistance Junction to Case

5

°C/W

SWITCHING PARAMETERS

Turn-ON Delay Time

10

25

ns

Rise Time

15

45

ns

Turn-OFF Delay Time

25

45

ns

Fall-Time

20

25

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

(Note 2)

1.4

V

Body Diode Reverse Recovery Time

100

ns

2. Pulse test: pulse width≤300ms, duty cycle≤2%.

3. Repetitive rating: pulse width limited by maximum junction temperature