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UT60N03G-TN3-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 UT60N03G-TN3-R
功能描述  N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT60N03G-TN3-R 数据表(HTML) 4 Page - Unisonic Technologies

  UT60N03G-TN3-R Datasheet HTML 1Page - Unisonic Technologies UT60N03G-TN3-R Datasheet HTML 2Page - Unisonic Technologies UT60N03G-TN3-R Datasheet HTML 3Page - Unisonic Technologies UT60N03G-TN3-R Datasheet HTML 4Page - Unisonic Technologies UT60N03G-TN3-R Datasheet HTML 5Page - Unisonic Technologies UT60N03G-TN3-R Datasheet HTML 6Page - Unisonic Technologies  
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UT60N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 6
www.unisonic.com.tw
QW-R502-237.D
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
30
V
Drain-Source Leakage Current
IDSS
VDS=25V, VGS=0V
1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
1
3
V
VGS=10V, ID=30A
14
23
Static Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=19A
24
30
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
900
pF
Output Capacitance
COSS
210
pF
Reverse Transfer Capacitance
CRSS
VDS=15V, VGS=0V, f=1MHz
90
pF
SWITCHING PARAMETERS
Turn-ON Time
t(ON)
90
ns
Turn-ON Delay Time
tD(ON)
11
ns
Turn-ON Rise Time
tR
49
ns
Turn-OFF Time
t(OFF)
83
ns
Turn-OFF Delay Time
tD(OFF)
27
ns
Turn-OFF Fall-Time
tF
VDD=15V, ID=7.9A, RL=18Ω, VGS=4.5V
28
ns
Turn-ON Time
t(ON)
48
ns
Turn-ON Delay Time
tD(ON)
6
ns
Turn-ON Rise Time
tR
26
ns
Turn-OFF Time
t(OFF)
120
ns
Turn-OFF Delay Time
tD(OFF)
52
ns
Turn-OFF Fall-Time
tF
VDD=15V, ID=7.9A, RL=18Ω, VGS=10V
28
ns
5V
VGS=0V~5V,VDD=15V,ID=19A IG=1.0mA
18
28
Total Gate Charge
10V
QG
VGS=0V~10V,VDD=15V,ID=19A,IG=1.0mA
9.6
14
nC
Threshold Gate Charge
QG(TH)
VGS=0V~1V,VDD=15V,ID=19A IG=1.0mA
1.0
1.5
nC
Gate-Source Charge
QGS
3.4
nC
Gate-Drain Charge
QGD
VDD=15V, ID=19A IG=1.0mA
3.4
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
ISD=19A
1.25
Drain-Source Diode Forward Voltage
VSD
ISD=10A
1.0
V
Reverse Recovery Time
trr
58
ns
Reverse Recovery Charge
QRR
ISD=9A, dIS/dt =100A/s,
70
nC



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