UT85N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-292.D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Drain Current

85

A

Pulsed Drain Current

350

A

Total Power Dissipation

TO-220/TO-263

83

W

TO-252

56

Junction Temperature

+75

°C

Strong Temperature

-55 ~ +175

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-263

62.5

°C/W

TO-252

110

Junction to Case

TO-220/TO-263

1.8

°C/W

TO-252

2.7



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Breakdown Voltage Temperature

Coefficient

0.018

V/°C

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

3

V

Static Drain-Source On-Resistance

6

mΩ

10

Forward Transconductance

32

S

DYNAMIC PARAMETERS

Input Capacitance

2700 4200 pF

Output Capacitance

550

pF

Reverse Transfer Capacitance

380

pF

SWITCHING PARAMETERS

Total Gate Charge (Note)

240 300

nC

Gate Source Charge

35

nC

Gate Drain Charge

78

nC

Turn-ON Delay Time (Note)

52

ns

Turn-ON Rise Time

100

ns

Turn-OFF Delay Time

460

ns

Turn-OFF Fall-Time

280

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

1.3

V

Body Diode Reverse Recovery Time

28

ns

Body Diode Reverse Recovery Charge

10

nC

Note: Pulse width≦300μs, Duty cycle≦2%