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UT2955G-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT2955G-TN3-R
功能描述  SINGLE P-CHANNEL POWER MOSFET
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT2955G-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT2955G-TN3-R Datasheet HTML 1Page - Unisonic Technologies UT2955G-TN3-R Datasheet HTML 2Page - Unisonic Technologies UT2955G-TN3-R Datasheet HTML 3Page - Unisonic Technologies UT2955G-TN3-R Datasheet HTML 4Page - Unisonic Technologies  
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UT2955
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-250.C
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
-1.7
A
Pulsed Drain Current
IDM
-10.4
A
Single Pulsed Avalanche Energy (Note 3)
EAS
225
mJ
Power Dissipation
SOT-223
PD
1.0
W
TO-252
1.13
W
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note:1.
2.
3.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
VDD=15V, VG=10V, IPK=6.7A, L=10mH, RG=25Ω
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
SOT-223
θJA
150
°C/W
TO-252
110
°C/W
Junction to Case
SOT-223
θJC
14
°C/W
TO-252
4.53
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250µA
-60
V
Drain-Source Leakage Current
IDSS
VDS=-60V, VGS=0V
-1.0
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
(Note)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-1.0mA
-2.0
-4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=-10V, ID=-0.75A
145
170
mΩ
VGS=-10V, ID=-1.5A
150
180
mΩ
VGS=-10V, ID=-2.4A
154
185
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-25V, VGS=0V, f=1MHz
492
pF
Output Capacitance
COSS
165
pF
Reverse Transfer Capacitance
CRSS
50
pF
SWITCHING PARAMETERS
Total Gate Charge
Total
QG
VDS=30V, VGS=10 V, ID=1.5A
14.3
nC
Threshold
1.2
nC
Gate Source Charge
QGS
2.3
nC
Gate Drain Charge
QGD
5.2
nC
Turn-ON Delay Time
tD(ON)
VGS=10V, VDD=25V, ID=1.5A,
RG=9.1Ω, RL=25Ω
11
ns
Turn-ON Rise Time
tR
7.6
ns
Turn-OFF Delay Time
tD(OFF)
65
ns
Turn-OFF Fall-Time
tF
38
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1.5A, VGS=0V
-1.10 -1.30
V
Body Diode Reverse Recovery Time
tRR
VGS=0V, dIS /dt=100A/µs
IS=1.5A
36
ns
Body Diode Reverse Recovery Charge
QRR
0.139
nC
Note: Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.



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