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UT4812G-S08-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UT4812G-S08-R
功能描述  DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT4812G-S08-R 数据表(HTML) 3 Page - Unisonic Technologies

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UT4812
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-166.C
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
Continuous Drain Current (Note3)
ID
6.9
A
Pulsed Drain Current (Note1)
IDM
30
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
74
110
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250µA
30
V
Drain-Source Leakage Current
IDSS
VDS =30V, VGS =0 V
1
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
1.9
3
V
Drain-Source On-State Resistance (Note2)
RDS(ON)
VGS =10V, ID =6.9A
22.5
28
mΩ
VGS =4.5V, ID =5.0A
34.5
42
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =15 V, VGS =0V, f=1MHz
680
820
pF
Output Capacitance
COSS
102
Reverse Transfer Capacitance
CRSS
77
108
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN =3Ω
4.6
7
ns
Turn-ON Rise Time
tR
4.1
6.2
Turn-OFF Delay Time
tD(OFF)
20.6
30
Turn-OFF Fall-Time
tF
5.2
7.5
Total Gate Charge
QG
VDS =15V, VGS =10V, ID =6.9A
13.84
17
nC
Gate Source Charge
QGS
1.82
Gate Drain Charge
QGD
3.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward
Voltage(Note2)
VSD
IS=1A
0.76
1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
3
A
Body Diode Reverse Recovery Time
tRR
IF=6.9 A, dI/dt=100A/μs
16.5
20
ns
Body Diode Reverse Recovery Charge
QRR
IF=6.9 A, dI/dt=100A/μs
7.8
10
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface Mounted on 1in
2 pad area, t≤10sec.



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