UT4957G-S08-R datasheet(1/4 Pages) UTC

部件名	UT4957G-S08-R

功能描述	P-CHANNEL ENHANCEMENT MOSFET

PDF	4 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UT4957

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-279.B

P-CHANNEL ENHANCEMENT

MODE POWER MOSFET



DESCRIPTION

The UT4957 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.



FEATURES

* RDS(ON) < 24mΩ @ VGS=-10V, ID=-7A

* RDS(ON) < 36mΩ @ VGS=4.5V, ID=-5A

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified



SYMBOL



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

12

3

456

7

8

UT4957G-S08-R

SOP-8

S1 G1 S2 G2 D2 D2 D1 D1

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source



MARKING

类似零件编号 - UT4957G-S08-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	UT4957G-S08-R	200Kb / 5P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
SHENZHEN DOINGTER SEMIC...	UT4957G-S08-R	1Mb / 4P	Dual P-Channel MOSFET uses advanced trench technology

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