UT6898

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-239.B



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

Continuous Drain Current

9.4

A

Pulsed Drain Current

38

A

Maximum Power Dissipation

2

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Case

40

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

20

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

(Note 1)

Gate Threshold Voltage

0.5

1

1.5

V

On State Drain Current

19

A

Drain-Source On-State Resistance

10

14

mΩ

13

18

DYNAMIC CHARACTERISTICS

Input Capacitance

1821

pF

Output Capacitance

440

pF

Reverse Transfer Capacitance

208

pF

SWITCHING PARAMETERS

(Note 1)

Turn-ON Delay Time

10

20

ns

Turn-ON Rise Time

15

27

ns

Turn-OFF Delay Time

34

55

ns

Turn-OFF Fall-Time

16

29

ns

Total Gate Charge

16

23

nC

Gate Source Charge

3

nC

Gate Drain Charge

4

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

1.3

V

Maximum Continuous Drain-Source Diode

Forward Current

0.7

1.2

A

Notes: 1. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%

2. The diode connected between the gate and source serves only as protection against ESD. No gate

overvoltage rating is implied