UTT10N10L-TN3-R datasheet(1/3 Pages) UTC

部件名	UTT10N10L-TN3-R

功能描述	N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

标志

1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UTT10N10

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-714.d

10A, 100V N-CHANNEL

MOSFET



DESCRIPTION

The UTC UTT10N10 is an N-channel enhancement mode power

MOSFET using UTC’s advanced technology to provide the

customers with a minimum on-state resistance, high switching speed

and ultra low gate charge. It also can withstand high energy pulse in

the avalanche and commutation mode.



FEATURES

* RDS(on) <180mΩ @VGS = 10 V

* High Switching Speed



SYMBOL



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free

Halogen Free

1

2

3

UTT10N10L-TM3-T

UTT10N10G-TM3-T

TO-251

G

D

S

Tube

UTT10N10L-TN3-R

UTT10N10G-TN3-R

TO-252

G

D

S

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source



MARKING

类似零件编号 - UTT10N10L-TN3-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	UTT10N10L-TN3-R	136Kb / 3P	10A, 100V N-CHANNEL MOSFET

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