UTD36N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-179.B



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

43.4

A

Pulsed Drain Current (Note 1)

173.6

A

Power Dissipation

TO-220

1.9

W

TO-252

1.6

W

Junction Temperature

+175

°С

Storage Temperature

-55 ~ +175

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction-to-Ambient

TO-220

62.5

°С/W

TO-252

75

°С/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

0.05

1

µA

Gate-Source Leakage Current

10

100

nA

ON CHARACTERISTICS

Gate-Threshold Voltage

1

1.5

2

V

Drain-Source On-State Resistance

18

22

mΩ

14

17

DYNAMIC CHARACTERISTICS

Input Capacitance

690

pF

Output Capacitance

160

Reverse Transfer Capacitance

110

SWITCHING PARAMETERS

Turn-ON Delay Time

6

ns

Turn-ON Rise Time

10

Turn-OFF Delay Time

33

Turn-OFF Fall-Time

19

Total Gate Charge

18.5

nC

Gate-Source Charge

4.2

Gate-Drain Charge

2.9

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

0.97

1.2

V

Maximum Continuous Drain-Source

Diode Forward Current

43.4

A

Maximum Pulsed Drain-Source Diode

Forward Current

173.6

Reverse Recovery Time

15

18

ns

Reverse Recovery Charge

2

3

nC

2. Pulse width ≤300us, duty cycle ≤2%.