UTT25P06G-TN3-R datasheet(4/5 Pages) UTC

4 / 5 page

UTT25P06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 5

www.unisonic.com.tw

QW-R502-595.E



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage (Note 1)

BVDSS

ID=-250µA, VGS=0V

-60

Positive Temperature Coefficient

mV/°C

Drain-Source Leakage Current

IDSS

VGS=0V, VDS=−60V, TJ=25°C

-10

µA

VGS=0V, VDS=−60V, TJ=150°C

-100

Gate- Source Leakage Current

Forward

IGSS

VGS=+15V, VDS=0V

+100

Reverse

VGS=-15V, VDS=0V

-100

ON CHARACTERISTICS

(Note 1)

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-1.2

-2.4

Negative Threshold Temperature

Coefficient

6.2

mV/°C

Static Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-12.5A

0.05 0.075

Ω

VGS=-10V, ID=-25A

0.055 0.082

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=-25V, f=1.0MHz

1650 2200

Output Capacitance

COSS

140

250

Reverse Transfer Capacitance

CRSS

125

180

SWITCHING PARAMETERS

(Note 1, 2)

Total Gate Charge

VGS=-10V, VDS=-48V, ID=-25A

155

200

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=-30V, ID=-1A, VGS=-10V,

RG=9.1Ω

Rise Time

118

Turn-OFF Delay Time

tD(OFF)

320

480

Fall-Time

100

160

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

(Note 1)

Drain-Source Diode Forward Voltage

VSD

IS=-25A, VGS=0V

-1.8

-2.5

IS=-25 A, VGS=0V, TJ=150°C

-1.4

Body Diode Reverse Recovery Time

tRR

IS=-25A, VGS=0V, dlS/dt=100A/µs

Body Diode Reverse Recovery Charge

QRR

0.2

µC

Notes: 1. Indicates Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.

2. Switching characteristics are independent of operating junction temperatures.

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