UT12N10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-508.f



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

12

A

Pulsed (Note 2)

44

A

Power Dissipation

SOT-223

9

W/°C

TO-251/TO-252

36

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 2)

SOT-223

150

°C/W

TO-251/TO-252

50

Junction to Case

SOT-223

14

°C/W

TO-251/TO-252

3.5

reference is defined as the solder mounting surface of the drain pins.

2. When mounted on a 1 in



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

Drain-Source Leakage Current

1

µA

Gate- Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

(Note 1)

Gate Threshold Voltage

1

3

V

Static Drain-Source On-State Resistance

150 180 mΩ

Forward Transconductance

5

S

DYNAMIC PARAMETERS

(Note 2)

Input Capacitance

430 500

pF

Output Capacitance

90

pF

Reverse Transfer Capacitance

20

pF

SWITCHING PARAMETERS

(Note 2)

Total Gate Charge

8

16

nC

Gate to Source Charge

1.5

nC

Gate to Drain Charge

2

nC

Turn-ON Delay Time

12

24

ns

Rise Time

174 185

ns

Turn-OFF Delay Time

132 145

ns

Fall-Time

188 210

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

12

A

Drain-Source Diode Forward Voltage (Note 1)

1.2

V

Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Guaranteed by design, not subject to production testing.