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UT3458G-AG6-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UT3458G-AG6-R
功能描述  N-CHANNEL JUNCTIN SILICON FET
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT3458G-AG6-R 数据表(HTML) 3 Page - Unisonic Technologies

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UT3458
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-578.D
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
60
V
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
1
µA
VDS=60V, VGS=0V, TJ=70°C
10
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.5
3
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3.2A
0.082 0.1
Ω
VGS=4.5V, ID=2.8A
0.105 0.128 Ω
On State Drain Current
ID(ON)
VGS=10V, VDS=5V
10
A
SWITCHING PARAMETERS
Input Capacitance
CISS
VDS =30 V, VGS = 0V, f = 1MHz
350
PF
Output Capacitance
COSS
40
Reverse Transfer Capacitance
CRSS
20
Total Gate Charge
QG
VDS=10V, VDS=48V, ID=3.2A
7.1
11
nC
VDS=4.5V, VDS=48V, ID=3.2A
3.5
5.5
Gate to Source Charge
QGS
VDS=4.5V, VDS=48V, ID=3.2A
1.1
Gate to Drain Charge
QGD
0.95
Turn-ON Delay Time
tD(ON)
VDD=30V, ID≈2.5A, RL=12Ω,
VGEN=4.5V, RG=1Ω(Note 1, 2)
16
25
ns
Rise Time
tR
17
30
Turn-OFF Delay Time
tD(OFF)
12
20
Fall Time
tF
10
15
Turn-ON Delay Time
tD(ON)
VDD=30V, ID≈2.5A, RL=12Ω,
VGEN=10V, RG=2.5Ω(Note 1, 2)
5
10
Rise Time
tR
12
20
Turn-OFF Delay Time
tD(OFF)
18
30
Fall Time
tF
10
15
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
2.9
A
Maximum Body-Diode Pulsed Current
ISM
10
A
Drain-Source Diode Forward Voltage
VSD
IS=2.5A, VGS=0V
0.8
1.2
V
Body Diode Reverse Recovery Time
tRR
IF=2.5A, di/dt=100A/µs (Note 1)
25
50
ns
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Guaranteed by design, not subject to production testing



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