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UT50N03G-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT50N03G-TN3-R
功能描述  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT50N03G-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT50N03G-TN3-R Datasheet HTML 1Page - Unisonic Technologies UT50N03G-TN3-R Datasheet HTML 2Page - Unisonic Technologies UT50N03G-TN3-R Datasheet HTML 3Page - Unisonic Technologies UT50N03G-TN3-R Datasheet HTML 4Page - Unisonic Technologies UT50N03G-TN3-R Datasheet HTML 5Page - Unisonic Technologies UT50N03G-TN3-R Datasheet HTML 6Page - Unisonic Technologies  
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UT50N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-168.F
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
50
A
Pulsed Drain Current (Note 2)
IDM
180
A
Single Pulsed Avalanche Energy (Note 3)
EAS
45
mJ
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 0.1mH, IAS = 30A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 3)
θJA
71.4
°C/W
Junction to Case
θJC
3.0
°C/W
Note: Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu



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