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UT50N03L-TND-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UT50N03L-TND-R
功能描述  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT50N03L-TND-R 数据表(HTML) 3 Page - Unisonic Technologies

  UT50N03L-TND-R Datasheet HTML 1Page - Unisonic Technologies UT50N03L-TND-R Datasheet HTML 2Page - Unisonic Technologies UT50N03L-TND-R Datasheet HTML 3Page - Unisonic Technologies UT50N03L-TND-R Datasheet HTML 4Page - Unisonic Technologies UT50N03L-TND-R Datasheet HTML 5Page - Unisonic Technologies UT50N03L-TND-R Datasheet HTML 6Page - Unisonic Technologies  
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UT50N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-168.F
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID =250 µA
30
V
Drain-Source Leakage Current
IDSS
VDS=20V, VGS =0V
1.5
µA
Gate-Source Leakage Current
IGSS
VDS =0V, VGS = ±20V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1.0
1.7
2.0
V
ID = 30 A
12
mΩ
VGS = 11.5V
ID = 15 A
11.7
mΩ
VGS = 10 V
ID = 30 A
12.5
14
mΩ
ID = 30 A
21
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS = 4.5V
ID = 15 A
19
23
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
610
750
pF
Output Capacitance
COSS
300
pF
Reverse Transfer Capacitance
CRSS
VDS=12V, VGS =0V, f=1MHz
125
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
8.2
ns
Turn-ON Rise Time
tR
9.6
ns
Turn-OFF Delay Time
tD(OFF)
11.2
ns
Turn-OFF Fall-Time
tF
VGS = 4.5 V, VDS =15 V,
ID = 30 A, RG = 3.0Ω
6.8
ns
Turn-ON Delay Time
tD(ON)
5.0
ns
Turn-ON Rise Time
tR
84
ns
Turn-OFF Delay Time
tD(OFF)
15
ns
Turn-OFF Fall-Time
tF
VGS = 11.5 V, VDS =15 V,
ID = 30 A, RG = 3.0Ω
4.0
ns
Total Gate Charge
QG
6.0
10
nC
Gate-to-Source Charge
QGS
1.9
nC
Gate-to-Drain Charge
QGD
VDS =15V,VGS =4.5V,
ID =30 A
3.7
nC
Total Gate Charge
QG
15
nC
Gate-to-Source Charge
QGS
1.9
nC
Gate-to-Drain Charge
QGD
VDS =15V,VGS =11.5V,
ID =30 A
3.9
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=30 A, VGS =0V
0.85
1.1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
45
A
Reverse Recovery Time
trr
24
ns
Reverse Recovery Charge
QRR
IS = 30 A, VGS = 0 V,
dI /dt = 100 A/μs
14
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%



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