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TLE4998P8D 数据表(PDF) 11 Page - Infineon Technologies AG |
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TLE4998P8D 数据表(HTML) 11 Page - Infineon Technologies AG |
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11 / 21 page ![]() TLE4998P8D Grade1 Maximum Ratings Technical Product Description 11 Revision 1.0, 2014-05-21 3 Maximum Ratings All further given descriptions are regarded to each of the implemented sensors IC’s, or otherwise noted. Table 3-1 Absolute Maximum Ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction temperature TJ - 40 – 140 °C – Voltage on V DD pin with respect to ground VDD -18 – 18.35 V 1)2) 1) Higher voltage stress than absolute maximum rating, e.g. 150% in latch-up tests is not applicable. In such cases, R series ≥100 Ω for current limitation is required. 2) Max 1h, in operating temperature range. Supply current @ overvoltage V DD max. IDDov ––15 mA – Reverse supply current @ V DD min. IDDrev -1 – 0 mA – Voltage on output pin with respect to ground VOUT -13) 3) I DD can exceed 10 mA when the voltage on OUT is pulled below -1 V (-5 V at room temperature). – 18.354) 4) V DD = 5 V, open drain permanent low, for max. 10 minutes V– Magnetic field BMAX -– 1 T – ESD protection VESD -2 - +2 kV According HBM JESD22-A114-B5) 5) 100 pF and 1.5 kΩ |
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