4N65-R datasheet(3/6 Pages) UTC

3 / 6 page

4N65-R

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-A65.a



ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250μA

650

Drain-Source Leakage Current

IDSS

VDS = 650 V, VGS = 0 V

μA

VDS = 480 V, TC =125°С

100

μA

Gate-Source Leakage Current

Forward

IGSS

VGS = 30 V, VDS = 0 V

100

Reverse

VGS = -30 V, VDS = 0 V

-100

Breakdown Voltage Temperature Coefficient

△

BVDSS/△TJ ID=250μA, Referenced to 25°C

0.6

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

3.0

5.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10 V, ID = 2.2A

2.9

3.4

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS = 25 V, VGS = 0V,

f = 1MHz

460

700

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDS = 30V, ID = 0.5A,

RG = 25Ω (Note 1, 2)

100

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

Total Gate Charge

VDS= 50V,ID= 1.3A,

VGS= 10V (Note 1, 2)

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

3.5

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 4.4A

1.4

Maximum Continuous Drain-Source

Diode Forward Current

4.4

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

17.6

Reverse Recovery Time

trr

VGS = 0V, IS = 4.4A,

dIF/dt = 100 A/μs (Note 1)

250

Reverse Recovery Charge

QRR

1.5

μC

Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%.

2. Essentially independent of operating temperature.

4N65-R 数据表(PDF) 3 Page - Unisonic Technologies

4N65-R 数据表(HTML) 3 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6

数据表下载