2N60L-TN3-R datasheet(4/7 Pages) UTC

4 / 7 page

2N60-C

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-A46.G



ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

600

VDS = 600V, VGS = 0V

μA

Drain-Source Leakage Current

IDSS

VDS = 480V, TC = 125°С

100

μA

Forward

VGS = 30V, VDS = 0V

100

Gate-Source Leakage Current

Reverse

IGSS

VGS = -30V, VDS = 0V

-100

Breakdown Voltage Temperature Coefficient △BVDSS △

/TJ ID=250μA, Referenced to 25°C

0.4

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID =1A

4.6

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

300 350

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDS =25V, VGS =0V, f =1MHz

SWITCHING CHARACTERISTICS

Total Gate Charge

Gate-Source Charge

QGS

3.5

Gate-Drain Charge

QGD

VDS=50V, VGS=10V, ID=1.3A

IG = 100μA (Note 1, 2)

2.5

Turn-On Delay Time

tD (ON)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

VDD =30V, ID =0.5A, RG=25Ω,

VGS=10V (Note 1, 2)

DRAIN-SOURCE DIODE CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, ISD = 2.0 A

1.4

Continuous Drain-Source Current

ISD

2.0

Pulsed Drain-Source Current

ISM

8.0

Reverse Recovery Time

trr

275

Reverse Recovery Charge

QRR

VGS = 0 V, ISD = 2A,

di/dt = 100 A/μs (Note 1)

1.1

μC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.

2. Essentially independent of operating temperature.

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