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2N60KL-TND-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 2N60KL-TND-R
功能描述  N-CHANNEL POWER MOSFET
PDF  7 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2N60KL-TND-R 数据表(HTML) 4 Page - Unisonic Technologies

  2N60KL-TND-R Datasheet HTML 1Page - Unisonic Technologies 2N60KL-TND-R Datasheet HTML 2Page - Unisonic Technologies 2N60KL-TND-R Datasheet HTML 3Page - Unisonic Technologies 2N60KL-TND-R Datasheet HTML 4Page - Unisonic Technologies 2N60KL-TND-R Datasheet HTML 5Page - Unisonic Technologies 2N60KL-TND-R Datasheet HTML 6Page - Unisonic Technologies 2N60KL-TND-R Datasheet HTML 7Page - Unisonic Technologies  
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2N60K-MT
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R502-B03.F
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
600
V
VDS = 600V, VGS = 0V
10
μA
Drain-Source Leakage Current
IDSS
VDS = 480V, TC =125°С
100
μA
Forward
VGS = 30V, VDS = 0V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature Coefficient △BVDSS △
/TJ ID=250μA, Referenced to 25°C
0.4
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
3.9
5.0
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
210 290
pF
Output Capacitance
COSS
31
43
pF
Reverse Transfer Capacitance
CRSS
VDS =25V, VGS =0V,
f =1MHz
4.5
6
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
40
60
ns
Turn-On Rise Time
tR
30
45
ns
Turn-Off Delay Time
tD(OFF)
52
60
ns
Turn-Off Fall Time
tF
VDD =30V, ID =0.5A,
RG=25Ω (Note 1, 2)
20
35
ns
Total Gate Charge
QG
11
13
nC
Gate-Source Charge
QGS
4.4
nC
Gate-Drain Charge
QGD
VDS=50V, VGS=1.0V,
ID=1.3A (Note 1, 2)
1.3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
1.4
V
Continuous Drain-Source Current
ISD
2.0
A
Pulsed Drain-Source Current
ISM
8.0
A
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature



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