4N60G-TQ2-R datasheet(5/8 Pages) UTC

5 / 8 page

4N60-N

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

5 of 8

www.unisonic.com.tw

QW-R502-971.B



ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

600

Drain-Source Leakage Current

IDSS

VDS = 600V, VGS = 0V

μA

Gate-Source Leakage Current

Forward

IGSS

VGS = 30V, VDS = 0V

100

Reverse

VGS = -30V, VDS = 0V

-100

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C

0.6

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10 V, ID = 2.2A

2.1

2.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1MHz

530 630

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD = 300V, ID = 4.0A,

RG = 25Ω (Note 1, 2)

Turn-On Rise Time

110

Turn-Off Delay Time

tD(OFF)

190

240

Turn-Off Fall Time

100

130

Total Gate Charge

VDS= 480V,ID= 4.0A,

VGS= 10V (Note 1, 2)

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0V, IS = 4.4A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

4.4

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

17.6

Reverse Recovery Time

trr

VGS = 0 V, IS = 4.4A,

dIF/dt = 100 A/μs (Note 1)

250

Reverse Recovery Charge

QRR

1.5

μC

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

4N60G-TQ2-R 数据表(PDF) 5 Page - Unisonic Technologies

4N60G-TQ2-R 数据表(HTML) 5 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6 7 8

数据表下载