6N60-P

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-969.C



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

6

A

Continuous Drain Current

6

A

Pulsed Drain Current (Note 2)

24

A

Single Pulsed (Note 3)

260

mJ

Avalanche Energy

Repetitive (Note 2)

13

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

3.0

ns

TO-220/TO-263

125

W

TO-220F/TO-220F1

40

W

TO-220F2

42

W

Power Dissipation

TO-251/TO-252

55

W

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

TO-220/TO-220F2

TO-220F/TO-220F1

TO-263

62.5

Junction to Ambient

TO-251/TO-252

110

°C/W

TO-220/TO-263

1.0

TO-220F/TO-220F1

3.2

TO-220F2

2.97

Junction to Case

TO-251/TO-252

2.27

°C/W