4N70G-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

4N70-C

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-A89.a



ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250 μA

700

Drain-Source Leakage Current

IDSS

VDS = 700 V, VGS = 0 V

μA

Gate-Source Leakage Current

Forward

IGSS

VGS = 30 V, VDS = 0 V

100

Reverse

VGS = -30 V, VDS = 0 V

-100

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA, Referenced to 25°C

0.6

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250 μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10 V, ID = 2A

2.6

2.8

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS = 25 V, VGS = 0 V,

f = 1MHz

800 950

Output Capacitance

COSS

320 400

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Total Gate Charge

VDS= 50V, ID= 1.3A, IG= 100μA

VGS= 10 V (Note 1, 2)

16.5

Gate-Source Charge

QGS

4.0

Gate-Drain Charge

QGD

3.7

Turn-On Delay Time

tD(ON)

VDD = 30V, ID = 0.5A, RG = 25Ω

(Note 1, 2)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

100

Turn-Off Fall Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 4A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

trr

VGS = 0 V, IS = 4A,

dI/dt = 100 A/μs (Note 1)

250

Reverse Recovery Charge

QRR

1.5

μC

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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