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1N40AG-AA3-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 1N40AG-AA3-R
功能描述  N-CHANNEL ENHANCEMENT
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

1N40AG-AA3-R 数据表(HTML) 4 Page - Unisonic Technologies

  1N40AG-AA3-R Datasheet HTML 1Page - Unisonic Technologies 1N40AG-AA3-R Datasheet HTML 2Page - Unisonic Technologies 1N40AG-AA3-R Datasheet HTML 3Page - Unisonic Technologies 1N40AG-AA3-R Datasheet HTML 4Page - Unisonic Technologies 1N40AG-AA3-R Datasheet HTML 5Page - Unisonic Technologies  
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1N40A
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 5
www.unisonic.com.tw
QW-R205-029.b
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
400
V
Breakdown Voltage Temperature
Coefficient
△
BVDSS △
/TJ Reference to 25°C, ID=250µA
0.4
V/°C
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
1
µA
Forward
VGS=+30V, VDS=0V
+100 nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-30V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=0.5A
4.0
6.8
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
125 150
pF
Output Capacitance
COSS
20
30
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
17
28
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
10
15
nC
Gate to Source Charge
QGS
3.22
nC
Gate to Drain Charge
QGD
VGS=10V, VDS=50V, ID=1.3A
(Note 1, 2)
0.8
nC
Turn-ON Delay Time
tD(ON)
33
40
ns
Rise Time
tR
20
35
ns
Turn-OFF Delay Time
tD(OFF)
58
78
ns
Fall-Time
tF
VDD=30V, ID=0.5A, RG=25Ω
(Note 1, 2)
17
30
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
1.0
A
Maximum Body-Diode Pulsed Current
ISM
4.0
A
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V
1.5
V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature



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