1N60-KW

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R205-054.D

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Continuous Drain Current

1

A

Avalanche Energy

Single Pulsed (Note 2)

23

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

SOT-89

0.69

W

SOT-223

0.8

W

TO-251/TO-252

1.1

W

Power Dissipation

TO-92

0.6

W

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

SOT-89

180

°С/W

SOT-223

150

°С/W

TO-251/TO-252

110

°С/W

Junction to Ambient

TO-92

180

°С/W

SOT-89

38

°С/W

SOT-223

14

°С/W

TO-251/TO-252

4.53

°С/W

Junction to Case

TO-92

88

°С/W