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12P10L-TN3-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 12P10L-TN3-R
功能描述  P-CHANNEL POWER MOSFET
PDF  7 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

12P10L-TN3-R 数据表(HTML) 4 Page - Unisonic Technologies

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12P10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 6
www.unisonic.com.tw
QW-R502-262.G
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=-250µA
-100
V
Drain-Source Leakage Current
IDSS
VDS=-100V, VGS=0V
-1
µA
VDS=-100V, TC=125°C
-10
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±30V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-2.0
-4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=-10V, ID=-4.7A
0.24 0.29
Forward Transconductance
gFS
VDS =-40V, ID=-4.7A (Note 1)
6.3
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-25V, VGS=0V, f=1.0MHz
570 800
pF
Output Capacitance
COSS
115 290
pF
Reverse Transfer Capacitance
CRSS
30
85
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=-50V, ID=-1.3A,
VGS=-10V(Note 1, 2)
21
27
nC
Gate Source Charge
QGS
4.6
nC
Gate Drain Charge
QGD
4
nC
Turn-ON Delay Time
tD(ON)
VDD=-30V, ID=-0.5A,
RG=25Ω(Note 1, 2)
30
40
ns
Turn-ON Rise Time
tR
64
100
ns
Turn-OFF Delay Time
tD(OFF)
155 175
ns
Turn-OFF Fall-Time
tF
70
90
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V, IS=-9.4A
-4.0
V
Maximum Body-Diode Continuous Current
IS
-9.4
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
-37.6
A
Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Note: 2. Essentially independent of operating temperature



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