15N25-P

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-A24.a



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

250

V

Gate-Source Voltage

±30

V

Continuous Drain Current

Continuous

15

A

Pulsed

60

A

Single Pulsed Avalanche Current

15

A

Single Pulsed Avalanche Energy

340

mJ

Power Dissipation

83

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

110

°C/W

Junction to Case

1.5

°C/W



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

250

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Static Drain-Source On-State Resistance

0.18 0.25

Ω

DYNAMIC PARAMETERS

Input Capacitance

830 1080 pF

Output Capacitance

200 260

pF

Reverse Transfer Capacitance

25

33

pF

SWITCHING PARAMETERS

Total Gate Charge

33

40

nC

Gate to Source Charge

6

nC

Gate to Drain Charge

6.7

nC

Turn-ON Delay Time

23

35

ns

Rise Time

50

74

ns

Turn-OFF Delay Time

314 332

ns

Fall-Time

89

97

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous

Current

15

A

Maximum Body-Diode Pulsed Current

60

A

Drain-Source Diode Forward Voltage

1.5

V