18T10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

VER.a



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

9

A

5.6

A

Pulsed (Note 1)

30

A

Total Power Dissipation

27.8

W

1.3

W

Junction Temperature

150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

110

°C/W

Junction to Case

4.5

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

Drain-Source Leakage Current

25

µA

250

µA

Gate-Source Leakage Current

Forward

+100 nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

3

V

Static Drain-Source On-State Resistance

(Note 3)

160 mΩ

440 mΩ

Forward Transconductance

5

S

DYNAMIC PARAMETERS

Input Capacitance

400

640

pF

Output Capacitance

55

pF

Reverse Transfer Capacitance

35

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 3)

23

50

nC

Gate to Source Charge

5.25

nC

Gate to Drain ("Miller") Charge

5.5

nC

Turn-ON Delay Time (Note 3)

33

ns

Rise Time

28

ns

Turn-OFF Delay Time

160

ns

Fall-Time

45

ns

SOURCE- DRAIN DIODE

Forward On Voltage (Note 3)

1.3

V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse test.