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18T10G-TN3-R 数据表(PDF) 1 Page - Unisonic Technologies |
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18T10G-TN3-R 数据表(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page ![]() UNISONIC TECHNOLOGIES CO., LTD 18T10 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R52-A54.a 9A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters, etc. FEATURES * RDS(ON)<0.16Ω @ VGS=10V * High switching speed * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 18T10L-TN3-T 18T10G-TN3-T TO-252 G D S Tube 18T10L-TN3-R 18T10G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
类似零件编号 - 18T10G-TN3-R |
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类似说明 - 18T10G-TN3-R |
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