12P10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-262.G



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-100

V

Gate-Source Voltage

±30

V

Continuous Drain Current

-9.4

A

Pulsed Drain Current (Note 2)

-37.6

A

Avalanche Current (Note 2)

-9.4

A

Single Pulsed Avalanche Energy (Note 3)

280

mJ

Repetitive Avalanche Energy (Note 2)

5.0

mJ

Power Dissipation

TO-251/TO-251S

TO-252/TO-252D

50

W

TO-263

65

W

SOT-223

8

W

SOP-8

5

W

Junction Temperature

+150

°С

Storage Temperature

-55 ~ +150

°С

Note:1.

2.

3.

4.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-251/TO-251S

TO-252/TO-252D

110

°С/W

TO-263

62.5

°С/W

SOT-223

125

°С/W

SOP-8

150

°С/W

Junction to Case

TO-251/TO-251S

TO-252/TO-252D

2.5

°С/W

TO-263

1.9

°С/W

SOT-223

14

°С/W

SOP-8

25

°С/W