数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

UT2P06G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT2P06G-AE3-R
功能描述  P-CHANNEL POWER MOSFET
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT2P06G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT2P06G-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT2P06G-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT2P06G-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
UT2P06
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-B01.B
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
-2
A
Pulsed
IDM
-6.03
A
Avalanche Current (L=0.1mH)
IAR
-7
A
Power Dissipation (Note 1, 2)
PD
0.3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on FR4 Board.
3. t ≤ 5 sec
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
320
°C/W
Notes: Pulse width ≤ 300μs; duty cycle ≤ 2%. The pulse current is limited by the maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VDS=0V
-60
V
Drain-Source Leakage Current
IDSS
VDS=-60V, VGS=0V
-0.5
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1
-3
V
Static Drain-Source On-State Resistance
(Note 1)
RDS(ON)
VGS= -10V, ID= -0.9A
0.4
Ω
VGS= -4.5V, ID= -0.8A
0.6
DYNAMIC PARAMETERS
Input Capacitance (Note 3)
CISS
VGS=0V, VDS=-25V, f=1.0MHz
141
pF
Output Capacitance (Note 3)
COSS
13.1
pF
Reverse Transfer Capacitance (Note 3)
CRSS
10.8
pF
SWITCHING PARAMETERS
(Note 2)
Total Gate Charge (Note 3)
QG
VGS=-10V, VDS=-30V, ID=-0.9A
5.1
nC
Gate to Source Charge (Note 3)
QGS
0.7
nC
Gate to Drain Charge (Note 3)
QGD
0.7
nC
Turn-ON Delay Time (Note 2, 3)
tD(ON)
VDD=-30V, ID=-1A, RG≈6Ω,
VGS=-10V
1.6
ns
Rise Time (Note 2, 3)
tR
2.3
ns
Turn-OFF Delay Time (Note 2, 3)
tD(OFF)
13
ns
Fall-Time (Note 2, 3)
tF
5.8
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
(Note 2)
Maximum Body-Diode Continuous Current
IS
TA=25°C (Note 2)
-1.42
A
Maximum Body-Diode Pulsed Current
ISM
TA=25°C (Note 3)
-6.03
A
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS=-0.8A, VGS=0V
-0.85 -0.95
V
Notes: 1. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. For design aid only, not subject to production testing.



Html Pages

1 2 3


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com