UTM6016

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-A76.D



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

8

A

Continuous

6.4

A

Drain Current

Pulsed (Note 2)

32

A

Avalanche Current

38

A

Single Pulse Avalanche Energy (Note 3)

123

mJ

SOP-8

1.5

W

DFN-8(5×6)

1.92

W

Junction Temperature

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS (Note 1)

PARAMETER

SYMBOL

RATINGS

UNIT

SOP-8

85

Junction to Ambient

DFN-8(5×6)

65

°C/W

SOP-8

24

Junction to Case

DFN-8(5×6)

12

°C/W

Notes: 1. The data tested by surface mounted on a 1 inch

2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.

4. The power dissipation is limited by 150°C junction temperature.