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UTT6N10ZG-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTT6N10ZG-TN3-R
功能描述  N-CHANNEL POWER MOSFET
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTT6N10ZG-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UTT6N10ZG-TN3-R Datasheet HTML 1Page - Unisonic Technologies UTT6N10ZG-TN3-R Datasheet HTML 2Page - Unisonic Technologies UTT6N10ZG-TN3-R Datasheet HTML 3Page - Unisonic Technologies  
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UTT6N10Z
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-921.B
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
6
A
Pulsed
IDM
24
A
Single Pulsed Avalanche Energy (Note 3)
EAS
12
mJ
Power Dissipation (TA=25°C)
(Note 1)
SOT-223
PD
0.8
W
TO-252
1.25
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 1)
SOT-223
θJA
150
°C/W
TO-252
100
°C/W
Junction to Case
SOT-223
θJC
12
°C/W
TO-252
7.5
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
1
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+10
µA
Reverse
VGS=-20V, VDS=0V
-10
µA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.0
2.2
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A
90
108
mΩ
VGS=4.5V, ID=1A
95
153
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
720 900
pF
Output Capacitance
COSS
85
65
pF
Reverse Transfer Capacitance
CRSS
33
60
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDD=50V, ID=1.3A
IG=100µA
28
nC
Gate to Source Charge
QGS
3.9
nC
Gate to Drain Charge
QGD
5.3
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, VGS=10V,
RGEN=25Ω
30
ns
Rise Time
tR
50
ns
Turn-OFF Delay Time
tD(OFF)
280
ns
Fall-Time
tF
80
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=6A, VGS=0V (Note 2)
0.8
1.3
V
Maximum Body-Diode Continuous Current
IS
6
A
Source Current Pulsed
ISM
24
A
Notes: 1. θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins.
θJC is guaranteed by design while θJA is determined by the user’s board deign.
2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
3. Starting TJ = 25°C, L =11mH, IAS =6A, VDD = 90V, VGS=10V.



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