5N70K-MT

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-B33.D

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

700

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

5

A

Continuous Drain Current

5

A

Pulsed Drain Current (Note 2)

20

A

Single Pulsed (Note 3)

150

Avalanche Energy

Repetitive (Note 2)

10

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

108

W

TO-220F/TO-220F1

TO-220F3

36

W

TO-220F2

38

W

Power Dissipation

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

54

W

Junction Temperature

+150

°C

Operation Temperature

-55~+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3

62.5

°C/W

Junction to Ambient

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

110

°C/W

TO-220

1.15

°C/W

TO-220F/TO-220F1

TO-220F3

3.47

°C/W

TO-220F2

3.28

°C/W

Junction to Case

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

2.30

°C/W