5N70KG-TND-R datasheet(4/7 Pages) UTC

4 / 7 page

5N70K-MT

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-B33.D



ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0V, ID = 250μA

700

Drain-Source Leakage Current

IDSS

VDS =700V, VGS = 0V

μA

Forward

VGS =30V, VDS = 0V

100

Gate-Source Leakage Current

Reverse

IGSS

VGS =-30V, VDS = 0V

-100

Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID =250μA, Referenced to 25°C

0.6

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID = 250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS =10V, ID = 2.5A

1.86 2.4

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

515 670

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDS = 25V, VGS = 0V,

f = 1.0MHz

6.5

8.5

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

180

Turn-Off Fall Time

VDD = 30V, ID =0.5A,

RG = 25Ω (Note 1, 2)

Total Gate Charge

Gate-Source Charge

QGS

6.7

Gate-Drain Charge

QGD

VDS = 50 V, ID = 1.3A,

VGS = 10 V (Note 1, 2)

3.9

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 5A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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