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QS8M11L-S08-R 数据表(PDF) 6 Page - Unisonic Technologies |
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QS8M11L-S08-R 数据表(HTML) 6 Page - Unisonic Technologies |
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6 / 6 page ![]() QS8M11 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 6 www.unisonic.com.tw VER.a TEST CIRCUITS AND WAVEFORMS(Cont.) P-CHANNEL 50kΩ 300nF DUT VDS -10V 12V Charge QGS QGD QG Gate Charge Test Circuit Gate Charge Waveforms VGS VGS 200nF Same Type as DUT -3mA UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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