UT4435-H

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R208-053.B



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

-8

A

Continuous

-5.1

A

Drain Current

Pulsed (Note 1)

-32

A

2.1

W

Power Dissipation

Derate above 25°C

0.017

W/°C

Junction Temperature

-55 ~ +150

°C

Storage Temperature Range

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Max. Junction to Ambient

60

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Breakdown Voltage Temperature

Coefficient

△

-0.03

V/°C

-1

µA

Drain-Source Leakage Current

-10

µA

Forward

+100

nA

Gate-Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1.0

-1.6

-2.5

V

△

4

mV/°C

16.5

20

mΩ

Static Drain-Source On-State Resistance

25.6

32

mΩ

Forward Transconductance

6.8

S

DYNAMIC PARAMETERS

Input Capacitance

1250 1820

pF

Output Capacitance

160

235

pF

Reverse Transfer Capacitance

90

130

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 2, 3)

11

17

nC

Gate to Source Charge (Note 2, 3)

3.4

6

nC

Gate to Drain Charge (Note 2, 3)

4.2

8

nC

Turn-ON Delay Time (Note 2, 3)

5.8

11

ns

Rise Time (Note 2, 3)

18.8

36

ns

Turn-OFF Delay Time (Note 2, 3)

46.9

89

ns

Fall-Time (Note 2, 3)

12.3

23

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

-8

A

Maximum Body-Diode Pulsed Current

-16

A

Drain-Source Diode Forward Voltage

-1

V

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. The data tested by pulsed , pulse width≤300us, duty cycle ≤2%

3. Essentially independent of operating temperature