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UTM6006G-S08-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UTM6006G-S08-R
功能描述  N-CHANNEL FAST SWITCHING MOSFET
PDF  7 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTM6006G-S08-R 数据表(HTML) 3 Page - Unisonic Technologies

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UTM6006
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 7
www.unisonic.com.tw
QW-R502-B18.D
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
60
V
BVDSS Temperature Coefficient
△
BVDSS △
/TJ Reference to 25°C , ID=1mA
0.057
V/°C
VDS=48V, VGS=0V, TJ=25°C
1
µA
Drain-Source Leakage Current
IDSS
VDS=48V, VGS=0V, TJ=55°C
5
µA
Forward
VGS=+20V, VDS=0V
+100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
1.2
2.5
V
VGS(TH) Temperature Coefficient
△
VGS(TH)
VDS=VGS, ID=250µA
-5.68
mV/°
C
VGS=10V, ID=6A
14
18
mΩ
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=4.5V, ID=4A
16
20
mΩ
Forward Transconductance
gFS
VDS=5V, ID=6A
40
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
1070 1200
pF
Output Capacitance
COSS
200
220
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
190
210
pF
SWITCHING PARAMETERS (Note 2)
Total Gate Charge (4.5V)
QG
290
310
nC
Gate to Source Charge
QGS
10.7
15
nC
Gate to Drain Charge
QGD
VGS=10V, VDS=48V, ID=1A
30
45
nC
Turn-ON Delay Time
tD(ON)
55
70
ns
Rise Time
tR
100
120
ns
Turn-OFF Delay Time
tD(OFF)
580
620
ns
Fall-Time
tF
VGS=10V, VDD=30V,
RG=3.3Ω, ID=2A
190
210
ns
GUARANTEED AVALANCHE CHARACTERISTICS
Single Pulse Avalanche Energy (Note 5)
EAS
VDD=25V, L=0.1mH, IAS=15A
19
mJ
DIODE CHARACTERISTICS
Continuous Source Current (Note 1, 6)
IS
6.3
A
Pulsed Source Current (Note 2, 6)
ISM
VG=VD=0V , Force Current
32
A
Diode Forward Voltage (Note 2)
VSD
VGS=0V , IS=6.3A , TJ=25°C
1
V
Reverse Recovery Time
trr
15
nS
Reverse Recovery Charge
Qrr
IF=6A, dI/dt=100A/μs, TJ=25°C
10.4
nC
Notes: 1. The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width≤300µs, duty cycle≤2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=30A.
4. The power dissipation is limited by 150°C junction temperature.
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power
dissipation.



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