UTN6266L-TM3-R datasheet(4/7 Pages) UTC

4 / 7 page

UTN6266

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-B28.d



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

VDS=60V, VGS=0V

µA

Zero Gate Voltage Drain Current

IDSS

VDS=60V, VGS=0V, TJ=55°C

µA

Forward

VGS=+20V, VDS=0V

+100 nA

Gate-Body Leakage Current

Reverse

IGSS

VGS=-20V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

1.5

2.0

2.5

VGS=10V, ID=20A

mΩ

VGS=10V, ID=20A, TJ=125°C

20.5

mΩ

Static Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=18A

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

390

Output Capacitance

COSS

190

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=30V, f=1.0MHz

170

Gate Resistance

f=1.0MHz

1.1

Ω

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

QGS

0.5

Gate to Drain Charge

QGD

VGS=10V, VDS=30V, ID=20A

0.5

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tD(OFF)

500

Fall-Time

VGS=10V, VDS=30V, RL=1.5Ω,

RGEN=3Ω

230

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Drain-Source Diode Forward Voltage (Note2)

VSD

IS=1A, VGS=0V

0.72

Notes: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤ 300us, duty cycle ≤ 2%.

3. Surface Mounted on 1in

2 pad area.

UTN6266L-TM3-R 数据表(PDF) 4 Page - Unisonic Technologies

UTN6266L-TM3-R 数据表(HTML) 4 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6 7

数据表下载