UTT30P06L-TN3-R datasheet(3/4 Pages) UTC

3 / 4 page

UTT30P06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-622.D



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-0.25mA, VGS=0V

-60

Drain-Source Leakage Current

IDSS

VDS=-60V, VGS=0V

-10

µA

Gate- Source Leakage

Current

Forward

IGSS

VGS=+15V, VDS=0V

+100

Reverse

VGS=-15V, VDS=0V

-100

ON CHARACTERISTICS

(Note 1)

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-1.2

-2.4

Static Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-15A

0.027 0.08

Ω

Drain-Source On-Voltage

VDS(ON)

VGS=-10V, ID=-30A

-2.0

-2.9

VGS=-10V, ID=-15A, TJ=150°C

-2.8

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=-25V, f=1.0MHz

1320 2190

Output Capacitance

COSS

260

730

Reverse Transfer Capacitance

CRSS

190

310

SWITCHING PARAMETERS

(Note 2)

Turn-ON Delay Time

tD(ON)

VGS=-10V, VDD=-30V,

ID=-1A, RG=9.1Ω

Rise Time

Turn-OFF Delay Time

tD(OFF)

535

600

Fall-Time

170

190

Gate Charge

VGS=-10V, VDS=-48V, ID=-30A

260

300

QGS

QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IS=-30A, VGS=0V

-2.3

-3.0

Body Diode Reverse Recovery Time

tRR

IS=-30A, VGS=0V,

dIS/dt=-100A/µs

175

Body Diode Reverse Recovery Charge

QRR

0.965

µC

Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.

2. Switching characteristics are independent of operating junction temperature.

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