UTT40P04

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-616.E



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-40

V

Gate-Source Voltage

±20

V

Package limited

-50

A

Continuous

Silicon limited

-58

A

Drain Current

Pulsed

-100

A

Single Pulsed Avalanche Energy (Note 2)

337

mJ

TO-220

125

TO-251/TO-252

TO-252D

55

TO-220

2

Power Dissipation

TO-251/TO-252

TO-252D

1.1

W

Junction Temperature

-55~+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

Junction to Ambient

TO-251/TO-252

TO-252D

110

°C/W

TO-220

1

Junction to Case

TO-251/TO-252

TO-252D

2.27

°C/W